Layer-by-layer nucleation mechanism for quantum dot formation in strained heteroepitaxy

Physical Review E - Statistical, Nonlinear, and Soft Matter Physics

Volumn 82, Issue 2, 2010, Pages

  Xiang, Ruoxi ^a   Lung, M T ^a   Lam, Chi Hang ^a  

^a HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

AXISYMMETRIC; CRITICAL RADIUS; ELASTIC STRAIN ENERGY; FACETTED SURFACES; FAST KINETICS; HETEROEPITAXY; ISLAND FORMATION; LATERAL EXPANSION; LAYER-BY-LAYERS; NUCLEATION ENERGY; NUCLEATION MECHANISM; QUANTUM DOT; SPONTANEOUS FORMATION; THREE-DIMENSIONAL (3D) ISLANDS; TOTAL FREE ENERGY;

DEPOSITION; EPITAXIAL GROWTH; FREE ENERGY; OPTICAL WAVEGUIDES; SEMICONDUCTOR QUANTUM DOTS; THREE DIMENSIONAL; TWO DIMENSIONAL;

NUCLEATION;

EID: 77955578767     PISSN: 15393755     EISSN: 15502376     Source Type: Journal    
DOI: 10.1103/PhysRevE.82.021601     Document Type: Article

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