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Thin Solid Films

Volumn 518, Issue 21, 2010, Pages 6076-6079

High aspect ratio contact hole etching using relatively transparent amorphous carbon hard mask deposited from propylene

(4) Ho, Ching Yuan a Lin, X J b Chien, H R b Lien, Chenhsin c

a CHUNG YUAN CHRISTIAN UNIVERSITY (Taiwan)

b POWERCHIP TECHNOLOGY CORPORATION (Taiwan)

c NATIONAL TSING HUA UNIVERSITY (Taiwan)

Author keywords

High aspect ratio contact; Hydrogenated amorphous carbon; Lithography

Indexed keywords

A-C FILM; A-C:H FILMS; CONTACT HOLE ETCHING; CONTACT PATTERN; DEPOSITION TEMPERATURES; DRY-ETCHING RESISTANCE; EFFECT OF TEMPERATURE; HARD MASKS; HIGH ASPECT RATIO; HIGH TRANSMITTANCE; HIGH TRANSPARENCY; HYDROGEN CONCENTRATION; HYDROGEN CONTENTS; HYDROGENATED AMORPHOUS CARBON; HYDROGENATED AMORPHOUS CARBON (A-C:H); MATRIX; NANOSCALE DEVICE; SCALE INTEGRATED CIRCUITS;

AMORPHOUS CARBON; AMORPHOUS FILMS; CROSSLINKING; DEFECT DENSITY; DRY ETCHING; HYDROGEN; HYDROGENATION; NANOTECHNOLOGY; PHOTORESISTS; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMA ETCHING; PRESSURE DROP; PROPYLENE; TRANSPARENCY;

ASPECT RATIO;

EID: 77955560025 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2010.06.008 Document Type: Article

Times cited : (36)

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