A theoretical study of boron and nitrogen doping in tetrahedral amorphous carbon

Solid State Communications

Volumn 100, Issue 8, 1996, Pages 549-553

  Sitch, P K ^a   Kohler Th ^a   Jungnickel, G ^a   Porezag, D ^a   Frauenheim, Th ^a  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

A. disordered systems; C. impurities in semiconductors; D. electronic states (localized)

Indexed keywords

AMORPHOUS MATERIALS; ATOMS; CARBON; CRYSTAL IMPURITIES; ELECTRONIC DENSITY OF STATES; NITROGEN; SEMICONDUCTING BORON; SEMICONDUCTING DIAMONDS;

AMORPHOUS CARBON; AMORPHOUS MATRIX; BORON DOPING; DENSITY FUNCTIONAL BASED TIGHT BINDING; NITROGEN DOPING; TETRAHEDRAL AMORPHOUS CARBON;

SEMICONDUCTOR DOPING;

EID: 0030291181     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1098(96)00538-8     Document Type: Article

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