SCOPUS 정보 검색 플랫폼

Volumn 95, Issue 14, 2009, Pages

Electrical bistabilities and carrier transport mechanisms of write-once-read-many-times memory devices fabricated utilizing ZnO nanoparticles embedded in a polystyrene layer

(5) Yun, Dong Yeol a Kwak, Jin Ku a Jung, Jae Hun a Kim, Tae Whan a Son, Dong Ick a

a Hanyang University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BI-STABILITY; CURRENT VOLTAGE; ELECTRICAL BISTABILITY; MEMORY DEVICE; ON/OFF RATIO; RANDOMLY DISTRIBUTED; RETENTION TIME; WRITE-ONCE-READ-MANY; ZNO NANOPARTICLES;

NANOPARTICLES; POLYSTYRENES; SEMICONDUCTING ZINC COMPOUNDS; TIN; ZINC OXIDE;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 70349900273 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3243463 Document Type: Article

Times cited : (53)

References (19)

1
- 33750465493
- High-performance transparent inorganic-organic hybrid thin-film n-type transistors
- DOI 10.1038/nmat1755, PII NMAT1755
- L. Wang, M. -H. Yoon, G. Lu, Y. Yang, A. Facchetti, and T. J. Marks, Nature Mater. 1476-1122 5, 893 (2006). 10.1038/nmat1755 (Pubitemid 44658575)
- (2006) Nature Materials , vol.5 , Issue.11 , pp. 893-900
- Wang, L.¹ Yoon, M.-H.² Lu, G.³ Yang, Y.⁴ Facchetti, A.⁵ Marks, T.J.⁶

2
- 33746064861
- x self-assembled nanoparticle arrays in polyimide
- DOI 10.1063/1.2220548
- J. H. Jung, J. H. Kim, T. W. Kim, C. S. Yoon, Y. H. Kim, and S. Jin, Appl. Phys. Lett. 0003-6951 89, 022112 (2006). 10.1063/1.2220548 (Pubitemid 44079070)
- (2006) Applied Physics Letters , vol.89 , Issue.2 , pp. 022112
- Jung, J.H.¹ Kim, J.H.² Kim, T.W.³ Yoon, C.S.⁴ Kim, Y.-H.⁵ Jin, S.⁶

3
- 34250706283
- Enhancement of quantum efficiency of organic light emitting devices by doping magnetic nanoparticles
- DOI 10.1063/1.2746415
- C. -J. Sun, Y. Wu, Z. Xu, B. Hu, J. Bai, J. P. Wang, and J. Shen, Appl. Phys. Lett. 0003-6951 90, 232110 (2007). 10.1063/1.2746415 (Pubitemid 46960289)
- (2007) Applied Physics Letters , vol.90 , Issue.23 , pp. 232110
- Sun, C.-J.¹ Wu, Y.² Xu, Z.³ Hu, B.⁴ Bai, J.⁵ Wang, J.-P.⁶ Shen, J.⁷

4
- 40049098980
- Improvement of organic solar cell performances using a zinc oxide anode coated by an ultrathin metallic layer
- DOI 10.1063/1.2888176
- J. C. Bernede, Y. Berredjem, L. Cattin, and M. Morsli, Appl. Phys. Lett. 0003-6951 92, 083304 (2008). 10.1063/1.2888176 (Pubitemid 351323100)
- (2008) Applied Physics Letters , vol.92 , Issue.8 , pp. 083304
- Bernde, J.C.¹ Berredjem, Y.² Cattin, L.³ Morsli, M.⁴

5
- 47549105110
- 0003-6951,. 10.1063/1.2957981
- S. M. Mok, F. Yan, and H. L. W. Chan, Appl. Phys. Lett. 0003-6951 93, 023310 (2008). 10.1063/1.2957981
- (2008) Appl. Phys. Lett. , vol.93 , pp. 023310
- Mok, S.M.¹ Yan, F.² Chan, H.L.W.³

6
- 1842424755
- Is There an Immortal Memory?
- DOI 10.1126/science.1095520
- J. C. Scott, Science 0036-8075 304, 62 (2004). 10.1126/science.1095520 (Pubitemid 38451454)
- (2004) Science , vol.304 , Issue.5667 , pp. 62-63
- Scott, J.C.¹

7
- 33846567589
- Charging phenomena in pentacene-gold nanoparticle memory device
- DOI 10.1063/1.2435598
- W. L. Leong, P. S. Lee, S. G. Mhaisalkar, T. P. Chen, and A. Dodabalapur, Appl. Phys. Lett. 0003-6951 90, 042906 (2007). 10.1063/1.2435598 (Pubitemid 46184665)
- (2007) Applied Physics Letters , vol.90 , Issue.4 , pp. 042906
- Leong, W.L.¹ Lee, P.S.² Mhaisalkar, S.G.³ Chen, T.P.⁴ Dodabalapur, A.⁵

8
- 44849115591
- 0003-6951,. 10.1063/1.2938878
- K. S. Yook, J. Y. Lee, S. H. Kim, and J. Jang, Appl. Phys. Lett. 0003-6951 92, 223305 (2008). 10.1063/1.2938878
- (2008) Appl. Phys. Lett. , vol.92 , pp. 223305
- Yook, K.S.¹ Lee, J.Y.² Kim, S.H.³ Jang, J.⁴

9
- 64149107357
- 0003-6951,. 10.1063/1.3111445
- D. I. Son, C. H. You, W. T. Kim, J. H. Jung, and T. W. Kim, Appl. Phys. Lett. 0003-6951 94, 132103 (2009). 10.1063/1.3111445
- (2009) Appl. Phys. Lett. , vol.94 , pp. 132103
- Son, D.I.¹ You, C.H.² Kim, W.T.³ Jung, J.H.⁴ Kim, T.W.⁵

10
- 0346305070
- 0021-8979,. 10.1063/1.1627482
- S. Möller and S. R. Forrest, J. Appl. Phys. 0021-8979 94, 7811 (2003). 10.1063/1.1627482
- (2003) J. Appl. Phys. , vol.94 , pp. 7811
- Möller, S.¹ Forrest, S.R.²

11
- 3042818235
- 0003-6951,. 10.1063/1.1763632
- S. Smith and S. R. Forrest, Appl. Phys. Lett. 0003-6951 84, 5019 (2004). 10.1063/1.1763632
- (2004) Appl. Phys. Lett. , vol.84 , pp. 5019
- Smith, S.¹ Forrest, S.R.²

12
- 33744485608
- Electrical switching and bistability in organic/polymeric thin films and memory devices
- DOI 10.1002/adfm.200500429
- Y. Yang, J. Ouyang, L. Ma, R. J.-H. Teseng, and C. -W. Chu, Adv. Funct. Mater. 1616-301X 16, 1001 (2006). 10.1002/adfm.200500429 (Pubitemid 43803724)
- (2006) Advanced Functional Materials , vol.16 , Issue.8 , pp. 1001-1014
- Yang, Y.¹ Ouyang, J.² Ma, L.³ Tseng, R.J.-H.⁴ Chu, C.-W.⁵

13
- 33947727452
- Write-Once-Read-Many-Times (WORM) memory applications in a monolayer of donor/acceptor supramolecule
- DOI 10.1021/cm062828b
- B. Mukherjee and A. J. Pal, Chem. Mater. 0897-4756 19, 1382 (2007). 10.1021/cm062828b (Pubitemid 46507039)
- (2007) Chemistry of Materials , vol.19 , Issue.6 , pp. 1382-1387
- Mukherjee, B.¹ Pal, A.J.²

14
- 38849123511
- The morphology control of pentacene for write-once-read-many-times memory devices
- DOI 10.1063/1.2836793
- J. Lin and D. Ma, J. Appl. Phys. 0021-8979 103, 024507 (2008). 10.1063/1.2836793 (Pubitemid 351190758)
- (2008) Journal of Applied Physics , vol.103 , Issue.2 , pp. 024507
- Lin, J.¹ Ma, D.²

15
- 63049124483
- 0003-6951,. 10.1063/1.3097805
- J. H. Ham, D. H. Oh, S. H. Cho, J. H. Jung, T. W. Kim, E. D. Ryu, and S. W. Kim, Appl. Phys. Lett. 0003-6951 94, 112101 (2009). 10.1063/1.3097805
- (2009) Appl. Phys. Lett. , vol.94 , pp. 112101
- Ham, J.H.¹ Oh, D.H.² Cho, S.H.³ Jung, J.H.⁴ Kim, T.W.⁵ Ryu, E.D.⁶ Kim, S.W.⁷

16
- 33747475248
- Electronic characterization of Al/PMMA[poly(methyl methacrylate)]/p-Si and Al/CEP(cyanoethyl pullulan)/p-Si structures
- DOI 10.1016/j.orgel.2006.02.003, PII S1566119906000267
- M. Na and S. W. Rhee, Org. Electron. 1566-1199 7, 205 (2006). 10.1016/j.orgel.2006.02.003 (Pubitemid 44255629)
- (2006) Organic Electronics: physics, materials, applications , vol.7 , Issue.4 , pp. 205-212
- Na, M.¹ Rhee, S.-W.²

17
- 53349177333
- 0003-6951,. 10.1063/1.2992203
- K. H. Park, J. H. Jung, F. Li, D. I. Son, and T. W. Kim, Appl. Phys. Lett. 0003-6951 93, 132104 (2008). 10.1063/1.2992203
- (2008) Appl. Phys. Lett. , vol.93 , pp. 132104
- Park, K.H.¹ Jung, J.H.² Li, F.³ Son, D.I.⁴ Kim, T.W.⁵

18
- 65549170498
- 0957-4484,. 10.1088/0957-4484/20/19/195203
- D. -I. Son, D. -H. Park, W. K. Choi, S. -H. Cho, W. -T. Kim, and T. W. Kim, Nanotechnology 0957-4484 20, 195203 (2009). 10.1088/0957-4484/20/19/195203
- (2009) Nanotechnology , vol.20 , pp. 195203
- Son, D.-I.¹ Park, D.-H.² Choi, W.K.³ Cho, S.-H.⁴ Kim, W.-T.⁵ Kim, T.W.⁶

19
- 34248504447
- A flexible polymer memory device
- DOI 10.1016/j.orgel.2007.02.002, PII S1566119907000110
- L. Li, Q. -D. Ling, S. -L. Lim, Y. -P. Tan, C. Zhu, D. S. H. Chan, E. -T. Kang, and K. -G. Neoh, Org. Electron. 1566-1199 8, 401 (2007). 10.1016/j.orgel.2007.02.002 (Pubitemid 46755047)
- (2007) Organic Electronics: physics, materials, applications , vol.8 , Issue.4 , pp. 401-406
- Li, L.¹ Ling, Q.-D.² Lim, S.-L.³ Tan, Y.-P.⁴ Zhu, C.⁵ Chan, D.S.H.⁶ Kang, E.-T.⁷ Neoh, K.-G.⁸

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