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Optics Communications

Volumn 283, Issue 19, 2010, Pages 3698-3702

Effect of normal and reversed polarizations on optical characteristics of ultraviolet-violet InGaN laser diodes

(5) Kuo, Yen Kuang a Horng, Syuan Huei a Tsai, Miao Chan a Yen, Sheng Horng b Chang, Shu Hsuan a

a NATIONAL CHANGHUA UNIVERSITY OF EDUCATION (Taiwan)

b EPISTAR CORPORATION (Taiwan)

Author keywords

Numerical simulation; Piezoelectric devices; Semiconductor lasers

Indexed keywords

HOLE LEAKAGE; INGAN LASER DIODES; LASER DIODES; LASER STRUCTURES; NUMERICAL SIMULATION; OPTICAL CHARACTERISTICS; QUANTUM WELL; SIMULATION RESULT; SINGLE QUANTUM; SPECTRAL RANGE; THRESHOLD CURRENTS;

COMPUTER SIMULATION; LASERS; LEAKAGE CURRENTS; OPTICAL MATERIALS; PIEZOELECTRIC DEVICES; PIEZOELECTRICITY; POLARIZATION; QUANTUM WELL LASERS; SEMICONDUCTOR DIODES; SEMICONDUCTOR QUANTUM WELLS;

ULTRAVIOLET LASERS;

EID: 77955471954 PISSN: 00304018 EISSN: None Source Type: Journal
DOI: 10.1016/j.optcom.2010.05.029 Document Type: Article

Times cited : (4)

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