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Materials Science Forum

Volumn 615 617, Issue , 2009, Pages 113-116

Control of the surface morphology on low off angled 4H-SiC homoepitaxal growth

(3) Kojima, Kazutoshi a Okumura, Hajime a Arai, Kazuo a

a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

Author keywords

4H SiC; Epitaxial growth; Face polarity; Morphology; Off angle; Step bunching; Triangular feature

Indexed keywords

EPITAXIAL GROWTH; SILICON CARBIDE; SILICON WAFERS; SURFACE MORPHOLOGY;

4H-SIC; FACE POLARITY; OFF-ANGLE; STEP BUNCHING; TRIANGULAR FEATURE;

MORPHOLOGY;

EID: 77955337318 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/MSF.615-617.113 Document Type: Conference Paper

Times cited : (10)

References (7)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.