Improved electrical characteristics of high-k gated MOS devices by nitrogen incorporation with plasma immersion ion implantation (PIII)

Microelectronic Engineering

Volumn 84, Issue 9-10, 2007, Pages 2192-2195

  Tsai, Ping Hung ^a   Chang Liao, Kuei Shu ^a   Kao, H Y ^a   Wang, T K ^a   Huang, S F ^b   Tsai, W F ^b   Ai, C F ^b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b Institution of Nuclear Energy Research   (Taiwan)

Author keywords

HfOxNy; High k gate dielectric; Nitridation treatment; Plasma immersion ion implantation

Indexed keywords

ELECTRIC PROPERTIES; GATE DIELECTRICS; ION IMPLANTATION; SEMICONDUCTING SILICON; SURFACE PROPERTIES;

HIGH-K GATE DIELECTRIC; ION ENERGY; NITRIDATION TREATMENT; PLASMA IMMERSION ION IMPLANTATION;

MOS DEVICES;

EID: 34248673731     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.04.045     Document Type: Article

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