Built-in field effect on the electron mobility in AlN/GaN/AlN quantum wells

Applied Physics Letters

Volumn 89, Issue 11, 2006, Pages

  Pokatilov, E P ^a,b   Nika, D L ^a,b   Balandin, A A ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b MOLDOVA STATE UNIVERSITY   (Moldova)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DRIFT MOBILITY; INTERSUBBAND ELECTRON TRANSITIONS; OPTICAL PHONONS; PERPENDICULAR ELECTRIC FIELDS;

CARRIER CONCENTRATION; ELECTRIC FIELD EFFECTS; ELECTRIC FIELDS; ELECTRON MOBILITY; ELECTRON TRANSITIONS; GALLIUM NITRIDE; HETEROJUNCTIONS; PHONONS; THERMAL EFFECTS; TUNING;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33748705373     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2349835     Document Type: Article

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