Direct observation of acoustic oscillations in InAs nanowires

Nano Letters

Volumn 10, Issue 7, 2010, Pages 2461-2465

  Mariager, Simon O ^a   Khakhulin, Dmitry ^a   Lemke, Henrik T ^a   Kjær, Kasper S ^a   Guerin, Laurent ^b   Nuccio, Laura ^a   Sørensen, Claus B ^a   Nielsen, Martin M ^a   Feidenhans'L, Robert ^a  

^a UNIVERSITY OF COPENHAGEN   (Denmark)

^b EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

Author keywords

Acoustic oscillations; Coherent phonons; InAs; Nanowires; X ray scattering

Indexed keywords

ACOUSTIC OSCILLATION; AMPLITUDE OF OSCILLATION; ANISOTROPIC THERMAL EXPANSION; AXIAL LATTICE; BENDING MOTION; BULK CRYSTALS; COHERENT PHONONS; CONTINUUM ELASTICITY THEORY; DIFFERENT MODES; DIFFERENT TIME SCALE; DIRECT OBSERVATION; EIGEN MODES; FEMTOSECOND LASER PULSE; INAS; OPTICAL REFLECTIVITY; RADIAL EXPANSIONS; SPEED OF SOUNDS; TIME-RESOLVED X-RAY DIFFRACTION; WURTZITE CRYSTAL STRUCTURE; WURTZITES;

ACOUSTIC INTENSITY MEASUREMENT; COHERENT SCATTERING; CRYSTAL STRUCTURE; LATTICE CONSTANTS; NANOWIRES; PHONONS; PULSED LASER APPLICATIONS; REFLECTION; SEMICONDUCTING INDIUM; THERMAL EXPANSION; ULTRASHORT PULSES; X RAY DIFFRACTION; X RAY SCATTERING; X RAYS; ZINC SULFIDE;

ACOUSTIC WAVE SCATTERING;

EID: 77955318001     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl100798y     Document Type: Article

References (31)

1. Ekinci, K. L.; Roukes, M. L. Rev. Sci. Instrum. 2005, 76 061101
2. Yan, R.; Gargas, D.; Yang, P. Nat. Photonics 2009, 3, 569
3. Hochbaum, A. I.; Yang, P. Chem. Rev. 2010, 110, 527
4. Xia, Y.; Yang, Y.; Sun, Y.; Wu, Y.; Mayers, B.; Gates, B.; Yin, Y.; Kim, F.; Yan, H. Adv. Mater. 2003, 15, 353
5. Lange, H.; Mohr, M.; Artemyev, M.; Woggon, U.; Thomsen, C. Nano Lett. 2008, 8, 4614
6. Hu, M.; Wang, X.; Hartland, G. V.; Mulvaney, P.; Juste, J. P.; Sader, J. E. J. Am. Chem. Soc. 2003, 125, 14925
7. Nam, C.-Y.; Jaroenapibal, P.; Tham, D.; Luzzi, D. E.; Evoy, S.; Fischer, J. E. Nano Lett. 2006, 6, 153
8. Smith, D. A.; Holmbert, V. C.; Lee, D. C.; Korgel, B. A. J. Phys. Chem. C 2008, 112, 10725
9. Wong, E. W.; Sheehan, P. E.; Lieber, C. M. Science 1997, 277, 1971
10. Chen, C. Q.; Shi, Y.; Zhang, Y. S.; Zhu, J.; Yan, Y. J. Phys. Rev. Lett. 2006, 96 075505
11. Flannigan, D. J.; Samartzis, P. C.; Yurtsever, A.; Zewail, A. H. Nano Lett. 2009, 9, 875
12. Zijlstra, P.; Tchebotareva, A. L.; Chon, J. W. M.; Gu, M.; Orrit, M. Nano Lett. 2008, 8, 3493
13. Owrutsky, J. C.; Pomfret, M. B.; Brown, D. J. J. Phys. Chem. C 2009, 113, 10947
14. Kolomenskii, A. A.; Jerebtsov, S. N.; Liu, H.; Zhang, H.; Ye, Z.; Luo, Z.; Wu, W.; Schuessler, H. A. J. Appl. Phys. 2008, 104, 103110.16
15. Chen, C. Q.; Shi, Y.; Zhang, Y. S.; Zhu, J.; Yan, Y. J. Phys. Rev. Lett. 2006, 96 075505
16. Yu, P.; Tang, J.; Sheng-Hsien, L. J.Phys.Chem.C 2008, 112, 17133
17. Nichol, J. M.; Hemesath, E. R.; Lauhon, L. J.; Budakian, R. Appl. Phys. Lett. 2008, 93, 193110
18. Belov, M.; Quitoriano, N. J.; Sharma, S.; Hiebert, W. K.; Kamins, T. I.; Evoy, S. J. Appl. Phys. 2008, 103 074304
19. Nilsson, S. G.; Borrisé, X.; Montelius, L. Appl. Phys. Lett. 2004, 85, 3555
20. Bargheer, M.; Zhavoronkov, N.; Gritsai, Y.; Woo, J. C.; Kim, D. S.; Woerner, M.; Elsaesser, T. Science 2004, 306, 1771
21. Landau, L. D.; Pitaevskii, L. P.; Lifshitz, E. M.; Kosevich, A. M. Theory of Elasticity, 3rd ed.; Butterworth-Heinemann: Oxford and New York, 1986.
22. There appears to be an error in formula 3 in ref 6, where sin and cos have been interchanged.
23. Mariager, S. O.; Lauridsen, S. L.; Dohn, A.; Bovet, N.; Sørensen, C. B.; Schlepütz, C. M.; Willmott, P. R.; Feidenhans'l, R. J. Appl. Crystallogr. 2009, 42, 369
24. Cammarata, M. Rev. Sci. Instrum. 2009, 80 015101
25. Thomsen, C.; Grahn, H. T.; Maris, H. J.; Tauc, J. Phys. Rev. B 1986, 34, 4129
26. Bucksbaum, P. H. Science 2004, 306, 1693
27. Burenkov, Y. A.; Davydov, S. Y.; Nikanorov, S. P. Sov. Phys. Solid State 1975, 17, 1446
28. Zhang, J.-M.; Zhang, Y.; Xu, K.-W.; Ji, V. J. Phys. Chem. Solids 2007, 68, 503
29. Zubrilov, A. In Properties of Advanced SemiconductorMaterials GaN, AlN, InN, BN, SiC, SiGe; Levinshtein, M. E.; Rumyantsev, S. L.; Shur, M. S., Eds.; John Wiley & Sons: New York, 2001; pp 49 - 66.
30. Hartland, G. V. J. Chem. Phys. 2002, 116, 8048
31. We did not determine the damage threshold, but a laser power of 199 mW reduced the X-ray signal by 50% in 1 s and visibly damaged the sample.