Al2O3 tunnel barrier as a good candidate for spin injection into silicon

Solid-State Electronics

Volumn 54, Issue 8, 2010, Pages 741-744

  Benabderrahmane, R ^a   Kanoun, M ^a   Bruyant, N ^a   Baraduc, C ^a   Bsiesy, A ^a   Achard, H ^b  

^a UMR 8191   (France)

^b CEA LETI   (France)

Author keywords

Al2O3; C V; I V; Modeling; Spin injection

Indexed keywords

CHARGE TRAP; ELECTRICAL CHARACTERISATION; ELECTRICAL PROPERTY; FOWLER-NORDHEIM; IMPEDANCE MEASUREMENT; MAGNETIC ATOMS; SILICON SUBSTRATES; SPIN INJECTION; TUNNEL BARRIER;

ALUMINUM; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC PROPERTIES; SILICON; SILICON OXIDES; SPIN DYNAMICS; TUNNEL DIODES; TUNNELING (EXCAVATION);

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77955311727     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2010.01.018     Document Type: Article

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