Chemical and structural modifications in a 193-nm photoresist after low-k dry etch

Thin Solid Films

Volumn 516, Issue 11, 2008, Pages 3454-3459

  Kesters, E ^a   Claes, M ^a   Le, Q T ^a   Lux, M ^a   Franquet, A ^a   Vereecke, G ^a   Mertens, P W ^a   Frank, M M ^b   Carleer, R ^c   Adriaensens, P ^c   Biebuyk, J J ^d   Bebelman, S ^d  

^a IMEC   (Belgium)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c HASSELT UNIVERSITY   (Belgium)

^d UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

Author keywords

Cross linking; Degradation; Dielectric etch; Low k; Photoresist; Plasma; Polymer characterization; Polymethacrylate

Indexed keywords

CHEMICAL MODIFICATION; CROSSLINKING; DEGRADATION; DRY ETCHING; SURFACE TREATMENT;

DIELECTRIC ETCH; POLYMER CHARACTERIZATION; POLYMETHACRYLATE;

PHOTORESISTS;

EID: 40649106493     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.01.018     Document Type: Article

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