Selection of ESH solvents for the wet removal of post-etch photoresists in low-k dielectrics integration

Microelectronic Engineering

Volumn 86, Issue 2, 2009, Pages 160-164

  Kesters, E ^a   Claes, M ^a   Le, Q T ^a   Barthomeuf, K ^b   Lux, M ^a   Vereecke, G ^a   Durkee, J B ^c  

^a IMEC   (Belgium)

^b UNIVERSITÉ DE LYON   (France)

^c Precisioncleaning   (United States)

Author keywords

ESH; Hansen solubility parameters; Organic solvents; Photoresist wet strip

Indexed keywords

COPOLYMERIZATION; DISSOLUTION; ENVIRONMENTAL REGULATIONS; ORGANIC COMPOUNDS; ORGANIC SOLVENTS; PHOTORESISTORS; PHOTORESISTS; POLYMERS; SOLUBILITY; SURFACE TREATMENT; TERNARY SYSTEMS;

DISSOLUTION KINETICS; DO-MAINS; ESH; HANSEN SOLUBILITY PARAMETERS; LOW-K DIELECTRICS; REASONABLE TIMES; ROOM TEMPERATURES; SEMICONDUCTOR MANUFACTURING; SOLUBILITY PROPERTIES; SOLVENT MIXTURES; SOLVENT MOLECULAR; SWELLING BEHAVIORS; WET PROCESSES;

SOLVENTS;

EID: 58149250541     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.10.002     Document Type: Article

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