High dose N ion implantation effects on surface treated UNCD films

Diamond and Related Materials

Volumn 19, Issue 7-9, 2010, Pages 927-931

  Sankaran, K J ^a   Joseph, P T ^a,b   Tai, N H ^a   Lin, I N ^b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b TAMKANG UNIVERSITY   (Taiwan)

Author keywords

Electron field emission; Ion implantation; Surface treatment; UNCD

Indexed keywords

AMORPHOUS PHASE; CHEMICAL STATE; ELECTRON FIELD EMISSION; FIELD EMISSION PROPERTY; GRAPHITIC PHASE; HIGH DOSE; N ION IMPLANTATION; NEAR-SURFACE; NITROGEN IONS; ULTRANANOCRYSTALLINE DIAMONDS;

AMORPHOUS FILMS; ANNEALING; CHARGE TRANSFER; FIELD EMISSION; ION EXCHANGE; RAMAN SPECTROSCOPY; SURFACE PROPERTIES; X RAY PHOTOELECTRON SPECTROSCOPY;

ION IMPLANTATION;

EID: 77955229596     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2010.02.027     Document Type: Article

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