Field emission enhancement in ultrananocrystalline diamond films by in situ heating during single or multienergy ion implantation processes

Journal of Applied Physics

Volumn 105, Issue 12, 2009, Pages

  Joseph, P T ^a   Tai, N H ^a   Chen, C H ^a   Niu, H ^a   Cheng, H F ^b   Palnitkar, U A ^c   Lin, I N ^c  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN NORMAL UNIVERSITY   (Taiwan)

^c TAMKANG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSFER DOPING; DIFFERENT EFFECTS; ELECTRON FIELD EMISSION; EMISSION ENHANCEMENT; FIELD EMISSION PROPERTY; IMPLANTATION PROCESS; IMPLANTED SAMPLES; IN-SITU HEATING; INDUCED DEFECTS; MULTIENERGY; N ION IMPLANTATION; PRIME FACTORS; ROOM TEMPERATURE; SPECIFIC SEQUENCES; STRUCTURAL TRANSFORMATION; TURN-ON FIELD; ULTRANANOCRYSTALLINE DIAMOND FILMS; ULTRANANOCRYSTALLINE DIAMONDS;

CHARGE TRANSFER; DIAMONDS; DOPING (ADDITIVES); FIELD EMISSION; GRAIN BOUNDARIES; ION BOMBARDMENT; ION EXCHANGE; ION IMPLANTATION; NANOCRYSTALLINE MATERIALS; SURFACE DEFECTS;

DIAMOND FILMS;

EID: 67650236477     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3152790     Document Type: Conference Paper

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