Exceptionally high ion-induced electron emission yield from hydrogenated diamond and its decay

Journal of Applied Physics

Volumn 92, Issue 12, 2002, Pages 7611-7613

  Cheifetz, E ^a   Richter, V ^b   Koenigsfeld, N ^b   Kalish, R ^b  

^a WEIZMANN INSTITUTE OF SCIENCE   (Israel)

^b TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; DOPING (ADDITIVES); ELECTRON EMISSION; ELECTRON TRANSPORT PROPERTIES; GRAPHITIZATION; HYDROGENATION; ION BOMBARDMENT; POINT DEFECTS;

ION-INDUCED ELECTRON EMISSION (IIEE);

DIAMONDS;

EID: 0037115684     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1521787     Document Type: Article

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