Tailoring the strong coupling regime in III-nitride based microcavities for room temperature polariton laser applications

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue 12, 2009, Pages 2820-2827

  Levrat, Jacques ^a   Butté, Raphaël ^a   Christmann, Gabriel ^b   Feltin, Eric ^a   Carlin, Jean François ^a   Grandjean, Nicolas ^a  

^a EPFL   (Switzerland)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE MEDIUM; BUILDING BLOCKES; CAVITY PHOTONS; DETRAPPING MECHANISM; DETUNINGS; ESCAPE RATE; HIGH QUALITY; HIGH TEMPERATURE; III-NITRIDE; LOWER POLARITON BRANCHES; POLARITON LASER; POLARITONS; QUANTUM WELL; ROOM TEMPERATURE; STRONG-COUPLING REGIME; TEMPERATURE RANGE; THERMALLY ACTIVATED; THERMODYNAMIC MODEL; THRESHOLD BEHAVIOR; THRESHOLD POWER DENSITY; TRAP DEPTH; VACUUM RABI SPLITTING;

BUILDING MATERIALS; EXCITONS; INSULATING MATERIALS; LASER APPLICATIONS; MICROCAVITIES; NITRIDES; PHONONS; QUANTUM THEORY; QUANTUM WELL LASERS; TEMPERATURE;

PHOTONS;

EID: 77955152818     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200982563     Document Type: Conference Paper

References (40)

1. M. Suzuki and T. Uenoyama, Phys. Rev. B 52, 8132 (1995).
2. T. Miyoshi, S. Masui, T. Okada, T. Yanamoto, T. Kozaki, S. Nagahama, and T. Mukai, Appl. Phys. Express 2, 062201 (2009).
3. C. Weisbuch, M. Nishioka, A. Ishikawa, and Y. Arakawa, Phys. Rev. Lett. 69, 3314 (1992)
4. and for a recent overview, see e.g., A. V. Kavokin, J. J. Baumberg, G. Malpuech, and F. P. Laussy, Microcavities (Oxford University Press, Oxford, 2007).
5. M. S. Skolnick, T. A. Fisher and D. M. Whittaker, Semicond. Sci. Technol. 13, 645 (1998).
6. J. Kasprzak, M. Richard, S. Kundermann, A. Baas, P. Jeambrun, J. M. J. Keeling, F. M. Marchetti, M. H. Szymańska, R. André, J. L. Staehli, V. Savona, P. B. Littlewood, B. Deveaud, and Le Si Dang, Nature (London) 443, 409 (2006).
7. A. Imamoglu, R. J. Ram, S. Pau, and Y. Yamamoto, Phys. Rev. A 53, 4250 (1996).
8. G. Malpuech, A. D. Carlo, A. Kavokin, M. Zamfirescu, and P. Lugli, Appl. Phys. Lett. 81, 412 (2002).
9. S. Christopoulos, G. Baldassarri Höger von Högersthal, A. J. D. Grundy, P. G. Lagoudakis, A. V. Kavokin, J. J. Baumberg, G. Christmann, R. Butté, E. Feltin, J.-F. Carlin, and N. Grandjean, Phys. Rev. Lett. 98, 126405 (2007).
10. S. Pau, G. Björk, J. Jacobson, H. Cao, and Y. Yamamoto, Phys. Rev. B 51, 14437 (1995).
11. R. Houdré, C. Weisbuch, R. P. Stanley, U. Oesterle, P. Pellandini, and M. Ilegems, Phys. Rev. Lett. 73, 2043 (1994).
12. V. Savona, L. C. Andreani, P. Schwendimann, and A. Quattropani, Solid State. Commun. 93, 733 (1995).
13. G. Christmann, R. Butté, E. Feltin, A. Mouti, P. A. Stadelmann, A. Castiglia, J.-F. Carlin, and N. Grandjean, Phys. Rev. B 77, 085310 (2008).
14. P. Y. Yu and M. Cardona, Fundamentals of Semiconductors, 2nd ed. (Springer, Berlin, 1999), p. 272.
15. R. Atanasov, F. Bassani, A. D'Andrea, and N. Tomassini Phys. Rev. B 50, 14381 (1994) ;
16. S. Schmitt-Rink, D. S. Chemla, and D. A. B. Miller, Phys. Rev. B 32, 6601 (1985).
17. R. Houdré, R. P. Stanley, U. Oesterle, M. Ilegems, and C. Weisbuch, J. Phys. IV 3,
18. Colloq. C 5, 51 (1993).
19. J. R. Jensen, P. Borri, W. Langbein, and J. M. Hvam, Appl. Phys. Lett. 76, 3262 (2000).
20. R. André, D. Heger, Le Si Dang, and Y. Merle d'Aubigné, J. Cryst. Growth 184/185, 758 (1998);
21. Le Si Dang, D. Heger, R. André, F. Bœuf, and R. Romestain, Phys. Rev. Lett. 81, 3920 (1998).
22. C. Bodin, R. André, J. Cibert, Le Si Dang, D. Bellet, G. Feuillet, and P. H. Jouneau, Phys. Rev. B 51, 13181 (1995).
23. K. Kornitzer , T. Ebner, K. Thonke, R. Sauer, C. Kirchner, V. Schwegler, M. Kamp, M. Leszczynski, I. Grzegory, and S. Porowski, Phys. Rev. B 60, 1471 (1999).
24. G. Christmann, R. Butté, E. Feltin, J.-F. Carlin, and N. Grandjean , Phys. Rev. B 73, 153305 (2006).
25. L. A. Coldren and S. W. Corzine, Diode Lasers and Photonic Integrated Circuits (John Wiley & Sons, Inc., New York, 1995).
26. H. Benisty, H. De Neve, and C. Weisbuch, IEEE J. Quantum Electron. 34, 1612 (1998).
27. J.-F. Carlin and M. Ilegems, Appl. Phys. Lett. 83, 668 (2003).
28. E. Feltin, J.-F. Carlin, J. Dorsaz, G. Christmann, R. Butté, M. Laügt, M. Ilegems, and N. Grandjean, Appl. Phys. Lett. 88, 051108 (2006).
29. J.-F. Carlin, C. Zellweger, J. Dorsaz, S. Nicolay, G. Christmann, E. Feltin, R. Butté, and N. Grandjean, Phys. Status Solidi B 242, 2326 (2005).
30. R. Butté, G. Christmann, E. Feltin, A. Castiglia, J. Levrat, G. Cosendey, A. Altoukhov, J.-F. Carlin, and N. Grandjean, Proc. SPIE 7216, 721619 (2009).
31. N. Grandjean, B. Damilano, S. Dalmasso, M. Leroux, M. Laügt, and J. Massies, J. Appl. Phys. 86, 3714 (1999).
32. E. Feltin, D. Simeonov, J.-F. Carlin, R. Butté, and N. Grandjean, Appl. Phys. Lett. 90, 021905 (2007).
33. J. J. Hopfield, Phys. Rev. 112, 1555 (1958).
34. C. Ciuti, P. Schwendimann, B. Deveaud, and A. Quattropani, Phys. Rev. B 62, R4825 (2000).
35. D. Sarchi and V. Savona, Phys. Rev. B 75, 115326 (2007);
36. J. Keeling, F. M. Marchetti, M. H. Szymańska, and P. B. Littlewood, Semicond. Sci.Technol. 22, R1 (2007).
37. G. Christmann, R. Butté, E. Feltin, J.-F. Carlin, and N. Grandjean, Appl. Phys. Lett. 93, 051102 (2008).
38. E. Feltin, G. Christmann, J. Dorsaz, A. Castiglia, J.-F. Carlin, R. Butté, N. Grandjean, S. Christopoulos, G. Baldassarri Höger von Högersthal, A.J.D. Grundy, P.G. Lagoudakis, and J.J. Baumberg, Electron. Lett. 43, 924 (2007).
39. K. D. Choquette and H. Q. Hou, Proc. IEEE 85, 1730 (1997);
40. K. D. Choquette and K. M. Geib, in: Vertical-Cavity Surface-Emitting Lasers, edited by C. Wilmsen, H. Temkin, and L. A. Coldren (Cambridge University Press, Cambridge, 1999), p. 199.