Effect of the low-temperature heating on formation and evolution of defects in PHEMT AlGaAs/InGaAs structures exposed by CF4 plasma

Physica B: Condensed Matter

Volumn 340-342, Issue , 2003, Pages 1099-1102

  Shamirzaev, T S ^a   Zhuravlev, K S ^a   Toropov, A I ^a   Bakarov, A K ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

Defects formation; Photoluminescence; Plasma treatment

Indexed keywords

ANNEALING; DIELECTRIC FILMS; DIFFUSION; HEATING; HETEROJUNCTIONS; HYDROGEN; INTERFACES (MATERIALS); LOW TEMPERATURE EFFECTS; PHOTOLUMINESCENCE; PLASMAS; POINT DEFECTS; PROBABILITY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR SUPERLATTICES;

DEFECTS FORMATION; PLASMA TREATMENT;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0345873447     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2003.09.179     Document Type: Conference Paper

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