Creation efficiency of nitrogen-vacancy centres in diamond

New Journal of Physics

Volumn 12, Issue , 2010, Pages

  Pezzagna, S ^a,b   Naydenov, B ^b   Jelezko, F ^b   Wrachtrup, J ^b   Meijer, J ^a  

^a RUHR UNIVERSITY BOCHUM   (Germany)

^b UNIVERSITY OF STUTTGART   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COLOUR CENTRES; DIAMOND LATTICES; FLUENCES; FURTHER DEVELOPMENT; HIGH YIELD; ION FLUENCES; ION IMPLANTATION ENERGY; NON-LINEAR REGIMES; POTENTIAL APPLICATIONS; PRODUCTION EFFICIENCY; PROOF-OF-PRINCIPLE EXPERIMENTS; SOLID-STATE QUANTUM INFORMATION PROCESSING;

COLOR CENTERS; DATA PROCESSING; DEFECTS; DIAMONDS; ION IMPLANTATION; QUANTUM THEORY; VACANCIES;

QUANTUM OPTICS;

EID: 77955065705     PISSN: 13672630     EISSN: None     Source Type: Journal    
DOI: 10.1088/1367-2630/12/6/065017     Document Type: Article

References (26)

1. Kane B E 1998 A silicon-based nuclear spin quantum computer Nature 393 133-7
2. Childress L, Gurudev Dutt M V, Taylor J M, Zibrov A S, Jelezko F, Wrachtrup J, Hemmer P R and Lukin M D 2006 Coherent dynamics of coupled electron and nuclear spin qubits in diamond Science 314 281-5 (Pubitemid 44571969)
3. Meijer J et al 2008 Towards the implanting of ions and positioning of nanoparticles with nm spatial resolution Appl. Phys. A 91 567-71
4. Weiss C D et al 2008 Single atom doping for quantum device development in diamond and silicon J. Vac. Sci. Technol. B 26 2596-600
5. Schnitzler W, Linke N M, Fickler R, Meijer J, Schmidt-Kaler F and Singer K 2009 Deterministic ultracold ion source targeting the Heisenberg limit Phys. Rev. Lett. 102 070501
6. van der Sar T, Heeres E C, Dmochowski G M, de Lange G, Robledo L, Oosterkamp T H and Hanson R 2009 Nanopositioning of a diamond nanocrystal containing a single NV defect center Appl. Phys. Lett. 94 173104
7. Schofield S R, Curson N J, Simmons M Y, Rueß F J, Hallam T, Oberbeck L and Clark R G 2003 Atomically precise placement of single dopants in Si Phys. Rev. Lett. 91 136104
8. Gurudev Dutt M V, Childress L, Jiang L, Togan E, Maze J, Jelezko F, Zibrov A S, Hemmer P R and Lukin M D 2007 Quantum register based on individual electronic and nuclear spin qubits in diamond Science 316 1312-6 (Pubitemid 46871647)
9. Hanson R, Dobrovitski V V, Feiguin A E, Gywat O and Awschalom D D 2008 Coherent dynamics of a single spin interacting with an adjustable spin bath Science 320 352-5
10. Neumann P, Mizuochi N, Rempp F, Hemmer P, Watanabe H, Yamakasi S, Jacques V, Gaebel T, Jelezko F and Wrachtrup J 2008 Multipartite entanglement among single spins in diamond Science 320 1326-9 (Pubitemid 351929466)
11. Jelezko F and Wrachtrup J 2006 Single defect centres in diamond: a review Phys. Status Solidi a 203 3207-25 (Pubitemid 44663368)
12. Kennedy T A, Colton J S, Butler J E, Linares R C and Doering P J 2003 Long coherence times at 300K for nitrogen-vacancy center spins in diamond grown by chemical vapour deposition Appl. Phys. Lett. 83 4190-2
13. Balasubramanian G et al 2009 Ultralong spin coherence time in isotopically engineered diamond Nat. Mater. 8 383-7
14. Degen C L 2008 Scanning magnetic field microscope with a diamond single-spin sensor Appl. Phys. Lett. 92 243111
15. Maze J R 2008 Nanoscale magnetic sensing with an individual electronic spin in diamond Nature 455 644-7
16. Balasubramanian G et al 2008 Nanoscale imaging magnetometry with diamond spins under ambient conditions Nature 455 648-51
17. Meijer J, Burchard B, Dohman M, Wittmann C, Gaebel T, Popa I, Jelezko F and Wrachtrup J 2005 Generation of single color centers by focused nitrogen implantation Appl. Phys. Lett. 87 261909
18. Rabeau J R, Reichart P, Tamanyan G, Jamieson D N, Prawer S, Jelezko F, Gaebel T, Popa I, Dohman M and Wrachtrup J 2006 Implantation of labelled single nitrogen vacancy centers in diamond using 15N Appl. Phys. Lett. 88 023113
19. Allers L, Collins A T and Hiscock J 1998 The annealing of interstitial-related optical centres in type II natural and CVD diamond Diam. Relat. Mater. 7 228-32 (Pubitemid 128396838)
20. lakoubovskii K and Adriaenssens G J 2001 Trapping of vacancies by defects in diamond J. Phys.: Condens. Matter 13 6015-18
21. Wotherspoon A, Steeds J W, Catmull B and Butler J 2003 Photoluminescence and positron annihilation measurements of nitrogen doped CVD diamond Diam. Relat. Mater. 12 652-57 (Pubitemid 36615350)
22. Meijer J, Stephan A, Adamczewski J, Röcken H, Weidenmüller U, Bukow H-H and Rolfs C 1999 Microprobe as implanter for semiconductor devices Nucl. Instrum. Methods B 158 39-43 (Pubitemid 30513498)
23. Zeigler J 2008 The stopping range of ions in matter, SRIM-2008, http://srim.org
24. Uzan-Saguy C, Cytermann C, Brener R, Richter V, Shaanan M and Kalish R 1995 Damage threshold for ion-beam induced graphitization of diamond Appl. Phys. Lett. 67 1194-6
25. Gippius A A, Khmelnitskiy R A, Dravin V A and Tkachenko S D 1999 Formation and characterization of graphitized layers in ion-implanted diamond Diam. Relat. Mater. 8 1631-4
26. Waldermann F C et al 2007 Creating diamond colour centers for quantum optical applications Diam. Relat. Mater. 16 1887-95