Formation and characterization of graphitized layers in ion-implanted diamond

Diamond and Related Materials

Volumn 8, Issue 8-9, 1999, Pages 1631-1634

  Gippius, A A ^a   Khmelnitskiy, R A ^a   Dravin, V A ^a   Tkachenko, S D ^a  

^a LEBEDEV PHYSICAL INSTITUTE   (Russian Federation)

Author keywords

Characterization; Diamond defects; Graphite; Ion implantation

Indexed keywords

ANNEALING; CATHODOLUMINESCENCE; CHARACTERIZATION; ELECTRIC VARIABLES MEASUREMENT; GRAIN BOUNDARIES; GRAPHITE; ION IMPLANTATION; OPTICAL VARIABLES MEASUREMENT; RAMAN SPECTROSCOPY;

GRAPHITIZED LAYERS; ION IMPLANTED DIAMOND; VACANCY MIGRATION;

SYNTHETIC DIAMONDS;

EID: 0032594257     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0925-9635(99)00047-3     Document Type: Article

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