Tungsten silicide gate etching with very high WSix to poly-Si selectivity and low WSix etch rate micro-loading in the high density plasma

Journal of the Korean Physical Society

Volumn 52, Issue 4 PART 1, 2008, Pages 1187-1191

  Ko, Yong Deuk ^a   Chun, Hui Gon ^a   Choi, Jinhan ^b  

^a University of Ulsan   (South Korea)

^b NONE   (United States)

Author keywords

High selectivity; Low etch rate micro loading; Tungsten silicide gate etching

Indexed keywords

EID: 43149103179     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: 10.3938/jkps.52.1187     Document Type: Article

References (12)