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Physical Review B - Condensed Matter and Materials Physics

Volumn 81, Issue 4, 2010, Pages

Electronic structure of Ga1-x Mnx As analyzed according to hole-concentration-dependent measurements

(10) Mayer, M A a,b Stone, P R a,b Miller, N a,b Smith, H M a,b Dubon, O D a,b Haller, E E a,b Yu, K M a Walukiewicz, W a Liu, X c Furdyna, J K c

a LAWRENCE BERKELEY NATIONAL LABORATORY (United States)

b Lawrence Berkeley National Laboratory (United States)

c UNIVERSITY OF NOTRE DAME (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 77954831898 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.81.045205 Document Type: Article

Times cited : (47)

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