Electronic structure of Ga1-xMnxAs studied by angle-resolved photoemission spectroscopy

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 10, Issue 1-3, 2001, Pages 192-195

  Okabayashi, J ^a   Kimura, A ^b   Rader, O ^c   Mizokawa, T ^a   Fujimori, A ^a   Hayashi, T ^a   Tanaka, M ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b HIROSHIMA UNIVERSITY   (Japan)

^c HAHN MEITNER INSTITUT   (Germany)

Author keywords

Density of states; Energy band dispersion; Ga1 xMnxAs; Photoemission spectroscopy

Indexed keywords

ELECTRONIC DENSITY OF STATES; ELECTRONIC STRUCTURE; EMISSION SPECTROSCOPY; FERMI LEVEL; MANGANESE; PHOTOEMISSION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; TRANSPORT PROPERTIES;

ANGLE RESOLVED PHOTOEMISSION SPECTROSCOPY; GALLIUM MANGANESE ARSENIDE;

MAGNETIC SEMICONDUCTORS;

EID: 0035333390     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(01)00080-7     Document Type: Article

References (15)