Temperature dependent magnetic anisotropy in (Ga,Mn)As layers

Physical Review B - Condensed Matter and Materials Physics

Volumn 70, Issue 24, 2004, Pages 1-6

  Sawicki, M ^a   Matsukura, F ^a,b,c   Idziaszek, A ^a   Dietl, T ^a,d   Schott, G M ^e   Ruester, C ^e   Gould, C ^e   Karczewski, G ^a,e   Schmidt, G ^e   Molenkamp, L W ^e  

^a INSTITUTE OF PHYSICS   (Poland)

^b TOHOKU UNIVERSITY   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^d UNIVERSITY OF WARSAW   (Poland)

^e UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC DERIVATIVE; FERROMAGNETIC MATERIAL; GALLIUM ARSENIDE; MANGANESE DERIVATIVE;

ANISOTROPY; ARTICLE; COMPRESSIVE STRENGTH; FILM; LOW TEMPERATURE; MAGNETISM; ORIENTATION; QUANTITATIVE ANALYSIS; SEMICONDUCTOR; STRESS STRAIN RELATIONSHIP; TEMPERATURE DEPENDENCE; THERMODYNAMICS;

EID: 20144376590     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.70.245325     Document Type: Article

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