Simulation and optimization of a 6H-SiC metal-semiconductor-metal ultraviolet photodetector

Journal of Semiconductors

Volumn 31, Issue 6, 2010, Pages

  Chen, Bin ^a   Yang, Yintang ^a   Li, Yuejin ^a   Liu, Hongxia ^a  

^a XIDIAN UNIVERSITY   (China)

Author keywords

I V characteristics; MSM structure; Schottky contact; ultraviolet photodetector

Indexed keywords

DEVICE PARAMETERS; DIFFERENT STRUCTURE; ELECTRODE SPACING; IV CHARACTERISTICS; METAL SEMICONDUCTOR METAL; MSM PHOTODETECTOR; MSM STRUCTURES; ORDERS OF MAGNITUDE; SCHOTTKY CONTACTS; SIMULATION AND OPTIMIZATION; SIMULATION PACKAGES; SIMULATION RESULT; THERMIONIC EMISSION THEORY; ULTRA-VIOLET PHOTODETECTORS;

COMPUTER SIMULATION; DARK CURRENTS; METALS; OPTIMIZATION; OPTOELECTRONIC DEVICES; PHOTOCURRENTS; PHOTODETECTORS; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; THERMIONIC EMISSION;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 77954799157     PISSN: 16744926     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-4926/31/6/064010     Document Type: Article

References (11)

1. Su Y K, Chang S J, Chen C H, et al. 2002 GaN metal-semiconductor-metal ultraviolet sensors with various contact electrodes IEEE Sensors J. 2 (4) 366
2. Chen Q, Khan M A, Sun C J, et al. 1995 Visible-blind ultraviolet photodetectors based on GaN p-n junctions Electron Lett 31 (20) 1781
3. Chen Q, Yang J W, Osinsky A, et al. 1997 Schottky barrier detectors on GaN for visible-blind ultraviolet detection Appl Phys Lett 70 (17) 2277
4. Zhang Chunfu, Hao Yue, Zhang Jinfeng, et al. 2005 Model and simulation of GaN based PIN photodetectors Chinese J. Semiconductors 26 (9) 1610
5. You Da, Tang Yinwen, Zhao Degang, et al. 2006 Characteristics of a front-illuminated visible-blind UV photodetector based on GaN p-i-n photodiodes with high quantum efficiency Chinese J. Semiconductors 27 (6) 896
6. Chang P C, Yu C L, Chang S J, et al. 2007 High-detectivity nitride-based MSM photodetectors on InGaN-GaN multiquantum well with the unactivated Mg-doped GaN layer IEEE J. Quantum Electron 43 (11) 1060
7. 0.84N/GaN heterostructures Phys Status Solidi B A 201 (12) 2686
8. Hsu S H, Su Y K, Chang S J, et al. 2006 InGaAsN metal-semiconductor-metal photodetectors with modulation-doped heterostructures IEEE Photonics Technol Lett 18 (3) 547
9. Wu Zhengyun, Xin Xiaobin, Yan Feng, et al. 2004 Fabrication of MSM structure UV photodetector on 4H-SiC Chinses J. Quantum Electronics 21 (2) 269
10. 2001 ISE TCAD release 7.0 manual. vol 4a (ISE Integrated Systems Engineering AG)
11. Sze S M, Coleman D J, Loya A 1971 Current transport in metal-semiconductor-metal (MSM) structures Solid-State Electron 14 1209