InGaAsN metal-semiconductor-metal photodetectors with modulation-doped heterostructures

IEEE Photonics Technology Letters

Volumn 18, Issue 3, 2006, Pages 547-549

  Hsu, S H ^a   Su, Y K ^a   Chang, S J ^a   Chen, W C ^a   Tsai, H L ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

InGaAsN; Metal organic chemical vapor deposition (MOCVD); Metal semiconductor metal photodetectors (MSM PDs); Modulation doped

Indexed keywords

CAP LAYERS; CAPACITANCE VOLTAGE MEASUREMENTS; HETEROSTRUCTURES; INGAASN; METAL SEMICONDUCTOR METAL PHOTODETECTOR; METALORGANIC CHEMICAL VAPOR DEPOSITION; MODULATION-DOPED; SCHOTTKY BARRIER HEIGHTS; THERMIONIC EMISSION THEORY;

CRYSTALS; DOPING (ADDITIVES); ELECTRON ABSORPTION; INDUSTRIAL CHEMICALS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALS; MODULATION; OPTOELECTRONIC DEVICES; ORGANIC CHEMICALS; PHOTODETECTORS; SCHOTTKY BARRIER DIODES; THERMIONIC EMISSION;

HETEROJUNCTIONS;

EID: 34547914331     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2005.863989     Document Type: Article

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