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Volumn 26, Issue 8, 2005, Pages 1610-1615

Model and simulation of GaN based PIN photodetectors

Author keywords

p i n photodetector; Polarization; Solar blind; Spectral responsivity; UV solar rejection ratios

Indexed keywords

ELECTRON MOBILITY; ENERGY GAP; POLARIZATION; REFRACTIVE INDEX; SEMICONDUCTING GALLIUM COMPOUNDS; SIMULATION;

EID: 25844493178     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (7)

References (18)
  • 2
    • 0002691353 scopus 로고    scopus 로고
    • GaN-dawn of 3rd-generation-semiconductors
    • Chinese source
    • Liang Chunguang, Zhang Ji. GaN-dawn of 3rd-generation-semiconductors. Chinese Journal of Semiconductors, 1999, 20(2): 89(in Chinese)
    • (1999) Chinese Journal of Semiconductors , vol.20 , Issue.2 , pp. 89
    • Liang, C.1    Zhang, J.2
  • 3
    • 0000470390 scopus 로고    scopus 로고
    • Visible blind GaN p-i-n photodiodes
    • Walker D, Saxler A, Kung P, et al. Visible blind GaN p-i-n photodiodes. Appl Phys Lett, 1998, 72(25): 3303
    • (1999) Appl Phys Lett , vol.72 , Issue.25 , pp. 3303
    • Walker, D.1    Saxler, A.2    Kung, P.3
  • 4
    • 0001095153 scopus 로고    scopus 로고
    • High speed, low noise ultraviolet photodetectors based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n) structures
    • Xu G Y, Salvador A, Kim W, et al. High speed, low noise ultraviolet photodetectors based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n) structures. Appl Phys Lett, 1997, 71(15): 2154
    • (1997) Appl Phys Lett , vol.71 , Issue.15 , pp. 2154
    • Xu, G.Y.1    Salvador, A.2    Kim, W.3
  • 5
    • 0031120767 scopus 로고    scopus 로고
    • Ultraviolet-sensitive visible-blind GaN photodiodes fabricated by molecular beam epitaxy
    • Van Hove J M, Hickman R, Klassen J J, et al. Ultraviolet-sensitive visible-blind GaN photodiodes fabricated by molecular beam epitaxy. Appl Phys Lett, 1997, 70(17): 2282
    • (1997) Appl Phys Lett , vol.70 , Issue.17 , pp. 2282
    • van Hove, J.M.1    Hickman, R.2    Klassen, J.J.3
  • 6
    • 7944236544 scopus 로고    scopus 로고
    • GaN Schottky barrier ultraviolet detector
    • Chinese source
    • Wang Jun, Zhao Degang, Liu Zongshun, et al. GaN Schottky barrier ultraviolet detector. Chinese Journal of Semiconductors, 2004, 25(6): 711 (in Chinese)
    • (2004) Chinese Journal of Semiconductors , vol.25 , Issue.6 , pp. 711
    • Wang, J.1    Zhao, D.2    Liu, Z.3
  • 7
  • 8
    • 0032606622 scopus 로고    scopus 로고
    • High-performance (Al, Ga)N-based solar-blind ultraviolet p-i-n detectors on laterally epitaxially overgrown GaN
    • Parsh G, Keller S, Kozodoy P, et al. High-performance (Al, Ga)N-based solar-blind ultraviolet p-i-n detectors on laterally epitaxially overgrown GaN. Appl Phys Lett, 1999, 75(2): 247
    • (1999) Appl Phys Lett , vol.75 , Issue.2 , pp. 247
    • Parsh, G.1    Keller, S.2    Kozodoy, P.3
  • 9
    • 0000783512 scopus 로고    scopus 로고
    • Solar-blind AlGaN-based inverted heterostructure photodiodes
    • Tarsa E J, Kozodoy P, Ibbetson J, et al. Solar-blind AlGaN-based inverted heterostructure photodiodes. Appl Phys Lett, 2000, 77(3): 316
    • (2000) Appl Phys Lett , vol.77 , Issue.3 , pp. 316
    • Tarsa, E.J.1    Kozodoy, P.2    Ibbetson, J.3
  • 10
    • 0032166947 scopus 로고    scopus 로고
    • Suggestion for the development of GaN-based photodiodes
    • Pulfrey D L, Nener B D. Suggestion for the development of GaN-based photodiodes. Solid-State Electron, 1998, 42(9): 1731
    • (1998) Solid-State Electron , vol.42 , Issue.9 , pp. 1731
    • Pulfrey, D.L.1    Nener, B.D.2
  • 11
    • 0348046461 scopus 로고    scopus 로고
    • Simulation of GaN and InGaN p-i-n and n-i-n photo-devices
    • Poochinda S, Chen T C, Stoebe T G, et al. Simulation of GaN and InGaN p-i-n and n-i-n photo-devices. J Cryst Growth, 2004, 261: 336
    • (2004) J Cryst Growth , vol.261 , pp. 336
    • Poochinda, S.1    Chen, T.C.2    Stoebe, T.G.3
  • 13
    • 0142038457 scopus 로고    scopus 로고
    • Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
    • Ambacher O, Foutz B, Smart J, et al. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures. J Appl Phys, 2000, 87: 334
    • (2000) J Appl Phys , vol.87 , pp. 334
    • Ambacher, O.1    Foutz, B.2    Smart, J.3
  • 14
    • 35949005062 scopus 로고
    • Pressure studies of gallium nitride crystal growth and fundamental electronic properties
    • Perlin P, Gorczyca I. Pressure studies of gallium nitride crystal growth and fundamental electronic properties. Phys Rev B, 1992, 45: 13307
    • (1992) Phys Rev B , vol.45 , pp. 13307
    • Perlin, P.1    Gorczyca, I.2
  • 15
    • 21544463523 scopus 로고
    • High-responsivity photoconductive ultraviolet sensors based on insulating single-crystal GaN epilayer
    • Khan M A, Kuznia J N, Olson D T, et al. High-responsivity photoconductive ultraviolet sensors based on insulating single-crystal GaN epilayer. Appl Phys Lett, 1992, 60(23): 2917
    • (1992) Appl Phys Lett , vol.60 , Issue.23 , pp. 2917
    • Khan, M.A.1    Kuznia, J.N.2    Olson, D.T.3
  • 16
    • 0003872707 scopus 로고
    • Chinese source, Beijing: National Defence Press
    • Liu Enke, Zhu Bingsheng, Luo Jinsheng, et al. Semiconductors physics. Beijing: National Defence Press, 1994 (in Chinese)
    • (1994) Semiconductors Physics
    • Liu, E.1    Zhu, B.2    Luo, J.3
  • 18
    • 0347373724 scopus 로고    scopus 로고
    • Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
    • Ibbetson J P, Fini P T, Ness K D, et al. Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors. Appl Phys Lett, 2000, 77: 250
    • (2000) Appl Phys Lett , vol.77 , pp. 250
    • Ibbetson, J.P.1    Fini, P.T.2    Ness, K.D.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.