Enhanced photoluminescence due to lateral ordering of GeSi quantum dots on patterned Si(001) substrates

Nanotechnology

Volumn 21, Issue 17, 2010, Pages

  Chen, Yanwu ^a   Pan, Bingying ^a   Nie, Tianxiao ^a   Chen, Peixuan ^a   Lu, Fang ^a   Jiang, Zuimin ^a   Zhong, Zhenyang ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM DOTS;

COULOMB SCREENING; DENSITY OF STATE; DISTRIBUTED FEEDBACK; EXCITATION POWER; LATERAL ORDERING; SI (001) SUBSTRATE; SIZE UNIFORMITY; UNIFORM DISTRIBUTION;

SILICON;

GERMANIUM; NANOPARTICLE; QUANTUM DOT; SILICON;

ARTICLE; CHEMISTRY; ELECTROCHEMISTRY; LUMINESCENCE; PARTICLE SIZE; TRANSMISSION ELECTRON MICROSCOPY;

ELECTROCHEMISTRY; GERMANIUM; LUMINESCENCE; MICROSCOPY, ELECTRON, TRANSMISSION; NANOPARTICLES; PARTICLE SIZE; QUANTUM DOTS; SILICON;

EID: 77954706985     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/21/17/175701     Document Type: Article

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