Theoretical study of electrolyte gate AlGaN/GaN field effect transistors

Journal of Applied Physics

Volumn 97, Issue 3, 2005, Pages

  Bayer, M ^a   Uhl, C ^a   Vogl, P ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN-CURRENT; ELECTROLYTE GATE; ION DETECTORS; ION SENSORS;

CHEMICAL REACTIONS; DISSOCIATION; ELECTROLYTES; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; HETEROJUNCTIONS; LEAKAGE CURRENTS; MATHEMATICAL MODELS; PH EFFECTS; PIEZOELECTRICITY; SEMICONDUCTOR MATERIALS;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 13644278169     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1847730     Document Type: Article

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