AlGaN/GaN high electron mobility transistor structures for pressure and pH sensing

Physica Status Solidi C: Conferences

Volumn 2, Issue 7, 2005, Pages 2684-2687

  Kang, B S ^a   Kim, S ^a   Kim, J ^a   Mehandru, R ^a   Ren, F ^a   Baik, K ^b   Pearton, S J ^b   Gila, B P ^b   Abernathy, C R ^b   Pan, C C ^c   Chen, G T ^c   Chyi, J I ^c   Chandrasekaran, V ^b   Sheplak, M ^b   Nishida, T ^b   Chu, S N G ^d  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^b UNIVERSITY OF FLORIDA   (United States)

^c NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^d Multiplex Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTANCE; ELECTRON MOBILITY; HETEROJUNCTIONS; HYDROCHLORIC ACID; PH EFFECTS; STRAIN;

HIGH ELECTRON MOBILITY TRANSISTOR(HEMT); PRESSURE SENSORS; STRAIN SENSOR APPLICATIONS; SURFACE CHARGE;

TRANSISTORS;

EID: 27344437854     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200461269     Document Type: Conference Paper

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