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Volumn 39, Issue 5, 2010, Pages 534-539

Generation of defects in heavily al-doped 4H-SiC epitaxial layers grown by the low-temperature halo-carbon method

(4) Das, Hrishikesh a Krishnan, Bharat a Kotamraju, Siva Prasad a Koshka, Yaroslav a

a MISSISSIPPI STATE UNIVERSITY (United States)

Author keywords

Dislocation density; Halo carbon precursors; Low temperature epitaxial growth; Molten KOH etching; P+ doping; Precipitates; SiC

Indexed keywords

CARBON PRECURSORS; DISLOCATION DENSITIES; KOH ETCHING; LOW TEMPERATURE EPITAXIAL GROWTH; MOLTEN KOH ETCHING;

ALUMINUM; DEFECTS; DEGRADATION; DOPING (ADDITIVES); ENERGY DISPERSIVE SPECTROSCOPY; EPITAXIAL GROWTH; ETCHING; POTASSIUM; POTASSIUM HYDROXIDE; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDE; SINGLE CRYSTALS; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77954624532 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-010-1099-2 Document Type: Conference Paper

Times cited : (2)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.