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Volumn 257, Issue 1-2, 2003, Pages 123-128

Low-temperature growth of aluminum nitride on sapphire substrates

Author keywords

A1. Crystal structure; A1. X ray diffraction; B1. Nitride; B1. Sapphire; B2. Semiconducting aluminum compounds

Indexed keywords

ALUMINUM; ARGON; CRYSTAL GROWTH; CRYSTAL STRUCTURE; CRYSTALLIZATION; MAGNETRON SPUTTERING; NITROGEN; SAPPHIRE; SEMICONDUCTING FILMS; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

EID: 0041930721     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(03)01565-3     Document Type: Article
Times cited : (24)

References (25)
  • 23
    • 0003685207 scopus 로고
    • London: Electronic Materials Information Service (EMIS)
    • Edgar J.H. Properties of Group III Nitrides. 1994;Electronic Materials Information Service (EMIS), London.
    • (1994) Properties of Group III Nitrides
    • Edgar, J.H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.