Molecular-beam epitaxy of AlN on off-oriented SiC and demonstration of MISFET using AlN/SiC interface

Physica Status Solidi C: Conferences

Volumn 2, Issue 7, 2005, Pages 2643-2646

  Onojima, N ^a   Kaido, J ^a   Suda, J ^a,b   Kimoto, T ^a  

^a KYOTO UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; CAPACITORS; CURRENT VOLTAGE CHARACTERISTICS; FILM GROWTH; INTERFACES (MATERIALS); IRRADIATION; MISFET DEVICES; MONOLAYERS; NATURAL FREQUENCIES; NITROGEN; PLASMAS; SILICON CARBIDE; THIN FILMS;

DEVICE STRUCTURE; GATE-STACKED STRUCTURE; GROWTH CONDITIONS; HETERO-INTERFACES;

MOLECULAR BEAM EPITAXY;

EID: 27444438106     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200461526     Document Type: Conference Paper

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