A selective-area metal bonding InGaAsP-Si laser

IEEE Photonics Technology Letters

Volumn 22, Issue 15, 2010, Pages 1141-1143

  Hong, Tao ^a   Ran, Guang Zhao ^a   Chen, Ting ^a   Pan, Jiao Qing ^b   Chen, Wei Xi ^a   Wang, Yang ^b   Cheng, Yuan Bing ^b   Liang, Song ^b   Zhao, Ling Juan ^b   Yin, Lu Qiao ^c   Zhang, Jian Hua ^c   Wang, Wei ^b   Qin, Guo Gang ^a  

^a PEKING UNIVERSITY   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

^c SHANGHAI UNIVERSITY   (China)

Author keywords

InGaAsP Si laser; selective area metal bonding (SAMB); Si photonics

Indexed keywords

AIR-GAPS; INGAASP; MAXIMUM OUTPUT POWER; METAL BONDING; OPTICAL COUPLINGS; ROOM TEMPERATURE; SI LASER; SI PHOTONICS; SI-WAVEGUIDE; SLOPE EFFICIENCIES; WAVE OPERATION;

METALS;

SILICON;

EID: 77954606468     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2010.2050683     Document Type: Article

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