Analysis of current-voltage measurements on long-wavelength hgcdte photodiodes fabricated on si composite substrates

Journal of Electronic Materials

Volumn 39, Issue 7, 2010, Pages 1110-1117

  Wijewarnasuriya, Priyalal ^a   Chen, Yuanping ^a   Brill, Greg ^a   Dhar, Nibir ^a,b   Benson, David ^c   Bubulac, Lucia ^c   Edwall, Dennis ^d  

^a U S ARMY RESEARCH LABORATORY   (United States)

^b DEFENSE ADVANCED RESEARCH PROJECTS AGENCY   (United States)

^c US Army Research Development and Engineering Command   (United States)

^d ROCKWELL SCIENTIFIC COMPANY   (United States)

Author keywords

Band to band tunneling; Curent voltage; HgCdTe; Shunt; Si; Trap assisted tunneling

Indexed keywords

ANTI-REFLECTION; BAND TO BAND TUNNELING; COMPOSITE SUBSTRATE; CURRENT-VOLTAGE MEASUREMENTS; DISLOCATION CORE; GETTERING; HGCDTE; HGCDTE PHOTODIODES; LATTICE-MATCHED SUBSTRATES; LATTICE-MISMATCHED SUBSTRATES; LONG WAVELENGTH; NONUNIFORMITY; ORDER OF MAGNITUDE; PERFORMANCE CHARACTERISTICS; SILICON SUBSTRATES; TAIL DISTRIBUTION; TRAP ASSISTED TUNNELING; ZERO BIAS;

DARK CURRENTS; FABRICATION; MERCURY COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

SUBSTRATES;

EID: 77954565776     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-010-1257-6     Document Type: Conference Paper

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