Morphological defects of molecular beam epitaxy-grown CdTe and CdSeTe on Si

Journal of Electronic Materials

Volumn 34, Issue 6, 2005, Pages 953-956

  Campo, Eva M ^a   Hierl, Thomas ^a   Hwang, James C M ^a   Chen, Yuanping ^b   Brill, Gregory ^b  

^a LEHIGH UNIVERSITY   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

CdSeTe; CdTe; Focused ion beam; Heteroepitaxy; HgCdTe; Molecular beam epitaxy (MBE); Morphological defect; Oval defect

Indexed keywords

CADMIUM COMPOUNDS; EPITAXIAL GROWTH; ION BEAMS; MOLECULAR BEAM EPITAXY; POLYCRYSTALLINE MATERIALS; SCANNING ELECTRON MICROSCOPY; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

CDSETE; CDTE; FOCUSED ION BEAM; HETEROEPITAXY; HGCDTE; MORPHOLOGICAL DEFECTS; OVAL DEFECTS;

SEMICONDUCTOR GROWTH;

EID: 21644485912     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-005-0049-x     Document Type: Conference Paper

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