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Volumn 3, Issue 7, 2010, Pages

Mechanism on effect of surface plasmons coupling with InGaN/GaN quantum wells: Enhancement and suppression of photoluminescence intensity

Author keywords

[No Author keywords available]

Indexed keywords

EMISSION ENHANCEMENT; EXCITATION POWER; EXTRACTION EFFICIENCIES; GAN CAP LAYERS; INGAN/GAN QUANTUM WELL; INTERNAL QUANTUM EFFICIENCY; PHOTOLUMINESCENCE INTENSITIES; SILVER THIN FILMS; SUPPRESSION MECHANISM; SURFACE PLASMONS;

EID: 77954467362     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.3.072001     Document Type: Article
Times cited : (6)

References (18)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.