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Volumn 90, Issue 19, 2007, Pages

Temperature dependence of the surface plasmon coupling with an InGaNGaN quantum well

b NONE

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ENERGY TRANSFER; INTERFACES (MATERIALS); QUANTUM EFFICIENCY; SEMICONDUCTOR QUANTUM WELLS; THIN FILMS;

COUPLING RATE; DELOCALIZATION; DENSITY OF STATE; MOMENTUM MATCHING;

SURFACE PLASMON RESONANCE;

EID: 34248367360 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2738194 Document Type: Article

Times cited : (48)

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