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Volumn 96, Issue 26, 2010, Pages

Effect of electrode configurations on the process-induced imprint behavior of epitaxial Pb (Zr0.52 Ti0.48) O3 capacitors

(5) Chen, Feng a,b Tan, Xuelian a Huang, Zhen a Xuan, Xiaofeng a Wu, Wenbin a

a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA (China)

b DARMSTADT UNIVERSITY OF TECHNOLOGY (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AS-GROWN; ELECTRODE CONFIGURATIONS; INTERNAL FIELD; P-E HYSTERESIS LOOPS; PZT; STRAIN GRADIENTS;

CAPACITANCE; CAPACITORS; HYSTERESIS; HYSTERESIS LOOPS; LEAD; MANGANESE OXIDE; OXYGEN;

ELECTROLYTIC CAPACITORS;

EID: 77954335418 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3458599 Document Type: Article

Times cited : (16)

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