Voltage shift phenomena in a heteroepitaxial BaTiO3 thin film capacitor

Journal of Applied Physics

Volumn 91, Issue 1, 2002, Pages 323-330

  Abe, K ^a   Yanase, N ^a   Yasumoto, T ^a   Kawakubo, T ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BATIO; BOTTOM ELECTRODES; FERROELECTRIC LAYERS; HETEROEPITAXIAL; LATTICE MISFIT STRAIN; NEGATIVE CHARGE; PULSE SEQUENCE; SWITCHING CURRENT MEASUREMENTS; THIN-FILM CAPACITORS; VOLTAGE SHIFT;

BARIUM COMPOUNDS; FERROELECTRIC THIN FILMS; HYSTERESIS LOOPS; THIN FILM CIRCUITS;

EPITAXIAL GROWTH;

EID: 0036139206     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1426249     Document Type: Article

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