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Applied Physics Letters

Volumn 96, Issue 26, 2010, Pages

Free-standing Alx Ga1-x As heterostructures by gas-phase etching of germanium

(4) Cole, Garrett D a Bai, Yu b Aspelmeyer, Markus a Fitzgerald, Eugene A b

a UNIVERSITY OF VIENNA (Austria)

b Massachusetts Institute of Technology Cambridge (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM CONTENTS; BULK- MICROMACHINING; EPITAXIAL LIFTOFF; ETCH RATES; FACILE FABRICATION; GAAS FILMS; GASPHASE; GE SUBSTRATES; HETEROSTRUCTURES; HIGH FREQUENCY HF; OPTOMECHANICAL; ROOM TEMPERATURE; SACRIFICIAL LAYER; UNDERLAYERS; XENON DIFLUORIDE;

CRYSTALS; ETCHING; GALLIUM; GALLIUM ALLOYS; XENON;

GERMANIUM;

EID: 77954335186 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3455104 Document Type: Article

Times cited : (29)

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