Dry etching of SiGe alloys by xenon difluoride

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 26, Issue 3, 2008, Pages 385-388

  Xuan, G ^a   Adam, T N ^a   Lv, P C ^a   Sustersic, N ^a   Coppinger, M J ^a   Kolodzey, J ^a   Suehle, J ^b   Fitzgerald, E ^c  

^a UNIVERSITY OF DELAWARE   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^c MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ETCH RATES; ETCHED MATERIALS;

CHARACTERIZATION; ETCHING; GERMANIUM ALLOYS; MICROFABRICATION; PARTIAL PRESSURE; SURFACE ROUGHNESS; XENON;

SILICON ALLOYS;

EID: 43049164087     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2891245     Document Type: Article

References (9)