(AlGa)As/(InGa)As strained-quantum-well FETs on silicon dioxide by selective device lift-off as an alternative to heteroepitaxy

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1988, Pages 704-707

  Myers, D R ^a   Klem, J F ^a   Lott, J A ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS, HYBRID--FABRICATION; OPTOELECTRONIC DEVICES--FABRICATION; SEMICONDUCTING GALLIUM COMPOUNDS--GROWTH; SILICA; SUBSTRATES;

MAJORITY-CARRIER DEVICES; SELECTIVE LIFT-OFF TECHNIQUE; STRAINED LAYER DEVICES; STRAINED QUANTUM WELL FET;

TRANSISTORS, FIELD EFFECT;

EID: 0024177910     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)