Effects of film thickness and annealing temperature on the specific contact resistivity and the lransmittance of the IZO layers grown on p-GaN by roll-to-roll sputtering

Journal of Korean Institute of Metals and Materials

Volumn 48, Issue 6, 2010, Pages 565-569

  Kim, Jun Young ^a   Kim, Jae Kwan ^a   Han, Seung Cheol ^a   Kim, Han Ki ^b   Lee, Ji Myon ^a  

^a Sunchon National University   (South Korea)

^b Kyung Hee University   (South Korea)

Author keywords

Electrical conductivity resistivity; Electrical properties; Electrical electronic materials; Sputtering; Transmittance

Indexed keywords

EID: 77954258887     PISSN: 17388228     EISSN: None     Source Type: Journal    
DOI: 10.3365/KJMM.2010.48.06.565     Document Type: Article

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