Dislocation-induced composition profile in alloy semiconductors

Solid State Communications

Volumn 150, Issue 29-30, 2010, Pages 1275-1278

  Ye, H ^a   Lu, P F ^a   Yu, Z Y ^a   Wang, D L ^a   Chen, Z H ^a   Liu, Y M ^a   Wang, S M ^b  

^a BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

^b CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

Mechanical properties; Nanostructures; Semiconductors

Indexed keywords

ALLOY SEMICONDUCTORS; COMPOSITION PROFILE; DISLOCATION CORE; DRIVING FORCES; HETEROSTRUCTURES; METHOD OF MOVING ASYMPTOTES; NANO SCALE; NANOSCALE REGIONS; NONUNIFORM;

CERIUM ALLOYS; FINITE ELEMENT METHOD; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES;

MECHANICAL PROPERTIES;

EID: 77954218606     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2010.05.023     Document Type: Article

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