Negative differential resistance in electrografted layer of N-(2-(4-diazoniophenyl)ethyl)-N′-hexylnaphthalene-1,8:4, 5-tetracarboxydiimide tetrafluoroborate on Si

Chemical Physics Letters

Volumn 493, Issue 1-3, 2010, Pages 135-140

  Koiry, S P ^a   Aswal, D K ^a   Jousselme, B ^b   Majumdar, C ^a   Gupta, S K ^a   Palacin, S ^b   Yakhmi, J V ^a  

^a BHABHA ATOMIC RESEARCH CENTRE   (India)

^b CNRS UMR 3299   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO; ELECTROCHEMICAL DEPOSITION; ELECTROGRAFTING; MOLECULAR ARCHITECTURE; NEGATIVE DIFFERENTIAL RESISTANCES; PEAK TO VALLEY CURRENT RATIO; SI SUBSTRATES; TETRAFLUOROBORATES; THEORETICAL CALCULATIONS; THEORETICAL SIMULATION;

MONOLAYERS; NEGATIVE RESISTANCE; REDUCTION; SILICON;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 77954212495     PISSN: 00092614     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cplett.2010.05.038     Document Type: Article

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