Coulomb blockade induced negative differential resistance effect in a self-assembly Si quantum dots array at room temperature

Thin Solid Films

Volumn 515, Issue 13, 2007, Pages 5466-5470

  Yu, L W ^a   Chen, K J ^a   Song, J ^a   Wang, J M ^a   Xu, J ^a   Li, W ^a   Huang, X F ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

Coulomb blockade; NDR; Si quantum dots array

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; OXIDATION; SELF ASSEMBLY; SEMICONDUCTOR QUANTUM DOTS; SILICON COMPOUNDS;

IN SITU PLASMA OXIDATION; NDR; ROOM TEMPERATURES; SI QUANTUM DOTS ARRAYS;

COULOMB BLOCKADE;

EID: 33947719752     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.01.032     Document Type: Article

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