Epitaxy and characterisation of AlInGaN heterostructures for HEMT application

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue SUPPL. 2, 2009, Pages

  Khoshroo, L Rahimzadeh ^a   Mauder, C ^a   Behmenburg, H ^a   Woitok, J ^b   Zander, W ^c   Gruis, J ^a   Reuters, B ^a   Schubert, J ^c   Vescan, A ^a   Heuken, M ^a,d   Kalisch, H ^a   Jansen, R H ^a  

^a RWTH AACHEN UNIVERSITY   (Germany)

^b MALVERN INSTRUMENTS LTD   (United Kingdom)

^c FORSCHUNGSZENTRUM JÜLICH   (Germany)

^d AIXTRON AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AFM; AIXTRON; ALINGAN; ALN; BARRIER LAYERS; CHARACTERISATION; ELECTRICAL CHARACTERIZATION; HALL MEASUREMENTS; HETEROSTRUCTURES; HIGH-RESOLUTION X-RAY DIFFRACTION; HRXRD; METAL-ORGANIC VAPOR PHASE EPITAXY; RECIPROCAL SPACE MAPS; RUTHERFORD BACK-SCATTERING; SAPPHIRE SUBSTRATES; SHEET CARRIER CONCENTRATION; SHEET RESISTANCE MEASUREMENTS; STATE OF THE ART; TERNARY STRUCTURE; TUNABILITIES; VANDER PAUW GEOMETRY; X RAY REFLECTION;

ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; CARRIER CONCENTRATION; CARRIER MOBILITY; CRYSTALS; ELECTRIC RESISTANCE; ELECTRIC RESISTANCE MEASUREMENT; EPITAXIAL GROWTH; GALLIUM NITRIDE; HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; ORGANOMETALLICS; PHOTOLUMINESCENCE SPECTROSCOPY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 77955798610     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200880944     Document Type: Article

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