Study on off-state breakdown in AlGaN/GaN HEMTs

Physica Status Solidi C: Conferences

Volumn , Issue 7, 2003, Pages 2335-2338

  Nakao, Takeshi ^a   Ohno, Yutaka ^a   Kishimoto, Shigeru ^a   Maezawa, Koichi ^a   Mizutani, Takashi ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HEMTS; ALGAN/GAN HIGHELECTRON-MOBILITY TRANSISTORS (HEMTS); DECREASING FUNCTIONS; GATE METAL DEPOSITION; GATE-LEAKAGE CURRENT; IMPACT IONIZATION COEFFICIENTS; OFF-STATE BREAKDOWN VOLTAGES; PLASMA SURFACE TREATMENT;

GALLIUM NITRIDE; IMPACT IONIZATION; LEAKAGE CURRENTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77954036134     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303405     Document Type: Conference Paper

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