ZnO thin film transistors fabricated by atomic layer deposition method

Materials Research Society Symposium Proceedings

Volumn 1201, Issue , 2010, Pages 265-269

  Kawamura, Yumi ^a   Hattorf, Nozomu ^b   Miyatake, Naomasa ^b   Murata, Kazutoshi ^b   Uraoka, Yukiharu ^a,c  

^a NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^b MITSUI ENGINEERING AND SHIPBUILDING CO LTD   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE CHANNEL LAYERS; ANNEALING TEMPERATURES; ATOMIC LAYER; ELECTRICAL PROPERTY; LARGE SHIFTS; LOW TEMPERATURES; OXYGEN AMBIENT; OXYGEN RADICAL; SUBTHRESHOLD SWING; ZNO; ZNO FILMS; ZNO THIN FILM;

ANNEALING; ATOMIC LAYER DEPOSITION; DEPOSITION; ELECTRIC PROPERTIES; METALLIC FILMS; OXIDE FILMS; OXYGEN; THIN FILMS; VAPOR DEPOSITION; ZINC; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 77953985316     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (16)

1. Y. Kuo, Thin Film Transistors: Materials and Processes (Kluwer Academic, New York, 2004), Vol. 1, p. 6.
2. T. Sameshima, J. Non-Cryst. Solids 227-230, 1196 (1998).
3. H. Kakinura, Phys. Rev. B 39, 10473 (1989).
4. R. B. M. Cross and M. M. D. Souza, Appl. Phys. Lett. 89, (2006) 263513.
5. Ü. Özgür, Y. I. Alivov, C. Liu, A. Teke, M.A. Reshchikov, S. Doǧan, V. Avrutin, S.J. Cho and H. Morkof, J. Appl. Phys. 98 (2005) 041301.
6. P. F. Carcia, R. S. McLearn, M. H. Reilly, and G. Nunes, Appl. Phys. Lett. 82 (2003) 1117.
7. R. L. Hoffman, B. J. Norris, and J. F. Wager, Appl. Phys. Lett. 82, (2003) 733.
8. S. Matsuda, K. Kitamura, Y. Okumura, and S. Miyatake: J. Appl. Phys., 93 (2003) 1624.
9. P. F. Carcia, R. S. McLearn, M. H. Reilly, and G. Nunes: Appl. Phys. Lett. 82 (2003) 1117.
10. E. Fortunato, P. Barquinha, A. Pimentel, A. Goncalves, A. Marques, L. Pereira, and R. Martins: Thin Solid Films 487 (2005) 205.
11. U.K. Murata, K. Washio, N. Miyatake, Y. Mori, H. Tachibana, Y. Uraoka, and T. Fuyuki, ECS Transactions, 11(7) (2007) 31.
12. S. Kwon, S. Bang, S. Lee, S. Jeon, W. Jeong, H. Kim, S. C. Gong, H. J.Chang, H. Park and H. Jeon, Semicond. Sci. Technol. 24 (2009) 035015.
13. D. H. Levy, D. Freeman, S. F. Nelson, P. J. Cowdery-Corvan, and L. M. Irving, Appl. Phys. Lett. 92 (2008) 192101.
14. S. J. Lim, S. J. Kwon, H. G. Kim and J. S. Park, Appl. Phys. Lett. 91 (2007) 183517.
15. Y. Kawamura, Y. Uraoka, H. Yano, T. Hatayama and T. Fuyuki, 2009 IMFEDK abstract pp. 84, (2009).
16. J. F. Moulder, W. F. Stickle, P. E. Sobol, and K. D. Bomben, Handbook of X-ray Photoelectron Spectroscopy, edited by J. Chastain, and R. C. King Jr. (Physical Electronics, Inc. publishers, Minnesota, 1995) p.40.