Improved air stability of n -channel organic thin-film transistors with surface modification on gate dielectrics

Applied Physics Letters

Volumn 93, Issue 10, 2008, Pages

  Chen, Fang Chung ^a   Liao, Cheng Hsiang ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; GATES (TRANSISTOR); POLYMERS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; THICK FILMS; THIN FILM DEVICES; THIN FILM TRANSISTORS; TRANSISTORS;

AIR-STABILITY; N -CHANNEL; POLYMER INSULATORS;

ABS RESINS;

EID: 51749101698     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2980421     Document Type: Article

References (20)

1. J. Zaumseil and H. Sirringhaus, Chem. Rev. (Washington, D.C.) 107, 1296 (2007).
2. A. Facchetti, M. H. Yoon, and T. J. Marks, Adv. Mater. (Weinheim, Ger.) 17, 1705 (2005).
3. H. Klauk, M. Halik, U. Zachieschang, G. Schmid, W. Radlik, and W. Weber, J. Appl. Phys. 92, 5259 (2002).
4. Y. Y. Lin, D. J. Gundlach, S. F. Nelson, and T. N. Jackson, IEEE Electron Device Lett. 18, 606 (1997).
5. Z. Bao, Adv. Mater. (Weinheim, Ger.) 12, 227 (2000).
6. L. L. Chua, J. Zaumseil, J. F. Chang, E. C. W. Ou, P. K. H. Ho, H. Sirringhaus, and R. H. Friend, Nature (London) 434, 194 (2005).
7. S. Tatemichi, M. Ichikawa, T. Koyama, and Y. Taniguchi, Appl. Phys. Lett. 89, 112108 (2006).
8. Y. Hosoi and Y. Furukawa, Mol. Cryst. Liq. Cryst. 462, 37 (2007).
9. D. Kumaki, S. Ando, S. Shimono, Y. Yamashita, T. Umeda, and S. Tokito, Appl. Phys. Lett. 90, 053506 (2007).
10. T. D. Anthopoulos, B. Sigh, N. Marjanovic, N. S. Sariciftci, A. M. Ramil, H. Sitter, M. Cölle, and D. M. de Leeuw, Appl. Phys. Lett. 89, 213504 (2006).
11. Z. Bao, A. J. Lovinger, and J. Brown, J. Am. Chem. Soc. 120, 207 (1998).
12. H. E. Katz, A. J. Lovinger, J. Johnson, C. Kloc, T. Siegrist, W. Li, Y. Y. Lin, and A. Dodabalapur, Nature (London) 404, 478 (2000).
13. C. R. Newman, C. D. Frisbie, D. A. da S. Filho, J. Bŕdas, P. C. Ewbamk, and K. R. Mann, Chem. Mater. 16, 4436 (2004).
14. B. Yoo, T. Jung, D. Basu, A. Dodabalapur, B. A. Jones, A. Facchetti, M. R. Wasielewski, and T. J. Marks, Appl. Phys. Lett. 88, 082104 (2006).
15. R. Schmidt, M. M. Ling, J. H. Oh, M. Winkler, M. Könemann, Z. Bao, and F. Würthner, Adv. Mater. (Weinheim, Ger.) 19, 3692 (2007).
16. Y. Hosoi, D. Tsunami, H. Ishii, and Y. Furukawa, Chem. Phys. Lett. 436, 139 (2007).
17. B. A. Jones, A. Facchetti, M. R. Wasielewski, and T. J. Marks, J. Am. Chem. Soc. 129, 15259 (2007).
18. G. Horowitz, J. Mater. Res. 19, 1946 (2004).
19. D. Kumaki, T. Umeda, and S. Tokito, Appl. Phys. Lett. 92, 093309 (2008).
20. M. H. Yoon, C. Kim, A. Facchetti, and T. J. Marks, J. Am. Chem. Soc. 128, 12851 (2006).